Planar receiving multichannel modules AFAR X-band based on LTCC ceramics-Made in Russia
Planar AFAR have significant advantages in weight and size characteristics compared with other solutions. At times, the mass and thickness of the sheet AFAR decreases. This allows their use in compact radar homing heads, on board a UAV and for a new class of antenna systems - conformal antenna arrays, i.e. repeating the shape of the object. Such grids, for example, are needed to create the next, sixth generation fighter.
JSC NIIPP is developing multi-channel integrated planar receiving and transmitting modules of AFAR using LTCC ceramics technology, which include all elements of the AFAR web (active elements, antenna radiators, microwave signal distribution and control systems, secondary power supply, control digital controller with interface circuit, liquid cooling system) and are functionally complete device. The modules allow their integration into antenna arrays of any size, and with a considerable amount of own integration, there are minimal requirements for the supporting structure, which should integrate such modules. This greatly simplifies for end users the task of creating an AFAR based on such modules.
Thanks to the original design solutions and the use of new and promising materials, such as low-temperature co-fired ceramics (LTCC), composite materials, multi-layer microchannel liquid cooling structures developed by NIIPP, highly integrated planar PPM AFAR differ:
• record low weight and size characteristics;
• high reliability and maintainability;
• high manufacturability and low cost.
NIIPP JSC is ready to develop and organize mass production of planar receiving, transmitting and transmitting / receiving modules of AFAR of S, C, X, Ku, Ka ranges, according to the requirements of the interested customer.
NIIPP has the most advanced positions in Russia and in the world in the field of developing planar AFAR modules using LTCC ceramics technology.
Quote:
planar, functionally complete design with integrated antenna elements
record low thickness - 13 mm
high resistance to WWF microwave submodules from LTCC ceramics
high processability, repeatability and stability of parameters
integrated high-speed synchronous serial control interface
possibility of combining modules to create antennas of any size
The results of the research and development complex in the field of GaAs and SiGe microwave monolithic integrated circuits, element libraries and CAD modules made at Tomsk University of control systems and radio electronics.
The noise figure of the developed amplifiers is 1,4-1,6 dB, while their analogs have the 2511, HMC2512 and HMC564 (USA) Trixint and Hittite (USA) models from the 565 to 1,5 dB.
In 2015, the NOC NT began work on the design of the microwave IIA for a universal multiband multichannel transceiver (L, S and C bands) as a system-on-chip (SoC). To date, based on 0,25 micron SiGe BiCMOS technology, the MIS designed the following broadband microwave devices (1-4,5 GHz frequency band): LNA, mixer, digital controlled attenuator (TsATT), and also TsATT control circuit.
Conclusion: In the near future, the “problem” of the radar for the Yak-130, the UAV, the GOS for the KR and OTR will be solved at a very serious level. With a high degree of probability, one can actually assume “a product that has no analogues in the world”. AFAR "in the weight category" 60-80 kg (I will keep silence on the radar weight required for the YAK-130 220kg-270k)? Yes Easy. Is there any desire to get a full-fledged 30 kg AFAR?
In the meantime ... For now, "the situation is like this":
At the Singapore Airshow-2016 Singapore Air Show held in February, a promising Russian fighter PAK FA has received several critical remarks from a representative of the company "Lockheed Martin" - The manufacturer of the fifth-generation multipurpose fighter F-35. He, in particular, said that only one property of radar stealth (“stealth”), which the PAK FA has, is not enough to classify the aircraft to this generation, apparently hinting at insufficiently advanced airborne radioelectronic equipment (TIR) T-50 .
At the same time, his assessment coincided with the opinion of a number of "experts" from Russia, who believe that PAK FA will have problems selling to the Asian market. They say that the onboard systems have too few fifth-generation technologies, and the price of the PAK FA, according to forecasts, will be significantly higher than on the Su-35, which is of interest to China and Indonesia. According to IHS Jane's Internet resource, the radar and the engine of the PAK FA (the main subsystem of the fighter) are the same as on the Su-35. Part of the avionics aboard the T-50 and Su-35 are also identical. Su-35 for all that belongs to the generation of 4 ++.
LA serial yet. Russia didn’t even think about selling it to China and Indonesia (here it would be possible to figure out the SU-35), however ... However, a representative of Lockheed Martin and a number of "experts" from Russia are already predicting: it will be expensive, there will be problems with selling to China and Indonesia. Sometimes. From stories "backwardness" of avionics of Russian / Soviet manufacture for a number of "experts" from Russia, for reference:
GaN and its solid solutions are among the most sought-after and promising materials of modern electronics. Works in this direction are conducted all over the world, conferences and seminars are regularly organized, which contributes to the rapid development of the technology for creating electronic and optoelectronic devices based on GaN. The breakthrough is observed both in the parameters of the LED structures based on GaN and its solid solutions, and in the characteristics of the PPM on gallium nitride is an order of magnitude higher than that of gallium arsenide devices.
During 2010, field effect transistors with Ft = 77,3 GHz and Fmax = 177 GHz were manufactured using domestic AlGaN / AlN / GaN heterostructures (CJSC Elma-Malakhit) at the Institute of Microwave Semiconductor Electronics (ISHFES), Russian Academy of Sciences, with a gain in power over 11,5 dB at 35 GHz. On the basis of these transistors, for the first time in Russia, the MIS of a three-stage power amplifier in the frequency range 27–37 GHz with Kp> 20 dB and a maximum output power of 300 mW in a pulsed mode was developed and successfully implemented. In accordance with the Federal Target Program "Development of Electronic Component Base and Radio Electronics", further development of scientific and applied research in this direction is expected. In particular - the development of InAlN / AlN / GaN heterostructures for the creation of devices with operating frequencies of 30-100 GHz, with the participation of leading domestic enterprises and institutes (FSUE NPP Pulsar, FSUE NPP Istok, ZAO Elma-Malakhit, JSC "Svetlana-Rost", ISHPE RAS, etc.).
The parameters of domestic heterostructures and transistors with the optimal length of the gates on their basis (calculation):
It has been established experimentally that for the Ka-band, the 2-type heterostructures with tb = 15 nm are optimal, of which V-1400 ("Elma-Malachite") on a SiC substrate that provides transistors has the best parameters. with an initial current of up to 1,1 A / mm with a maximum slope of up to 380 mA / mm and a cut-off voltage of -4 B. At the same time, field-effect transistors with LG = 180 nm (LG / tB = 12) have fT / fMAX = 62 / 130 GHz without short-channel effects, which is optimal for PA Ka-band. At the same time, transistors with LG = 100 nm (LG / tB = 8) on the same structure have higher frequencies fT / fMAX = 77 / 161 GHz, that is, they can be used in higher frequency V- and E-bands, but due to short-channel effects are not optimal for these frequencies.
Let's look together the most advanced "alien" and our radar:
Retro: “Pharaoh-M” airborne radar station (it was planned to be installed on Su-34, 1.44, “Golden Eagle”). Diameter of beam 500 mm. Inequilibrium phased array "Phazotron". Sometimes they call her also "Spear-F".
Explanation:
Planar technology - a set of technological operations used in the manufacture of planar (flat, surface) semiconductor devices and integrated circuits.
Application:
-for antennas: BlueTooth planar antenna systems in cell phones.
- for converters IP and PT: Planar transformers Marathon, Zettler Magnetics or Payton.
- for SMD transistors
etc. see the patent of the Russian Federation RU2303843 for more details.
LTCC ceramics:
Low Temperature Co-Fired Ceramic (LTCC) is a low-temperature co-fired ceramic technology used to create microwave emitting devices, including Bluetooth and WiFi modules in many smartphones. It is widely known for the use in the manufacture of AFAR radars of the fifth generation fighter T-50 and tank fourth generation T-14.
The essence of the technology lies in the fact that the device is made like a printed circuit board, but located in the molten glass. "Low temperature" means that roasting is carried out at temperatures around 1000C instead of 2500C for HTCC technology, when it is possible to use not very expensive high-temperature components of molybdenum and tungsten in HTCC, but also cheaper copper in gold and silver alloys.
Used documents and photographs (all information is taken from an open press):
http://www.niipp.ru (Материалы АО " НИИП")
http://ieeexplore.ieee.org
http://www.nanoindustry.s
http://wikipedia.org
http://icquest.ru
https://news.rambler.ru
PLANAR-BNK Presentation of the Tech Project 121030 (Monastyrev EA, Deputy Director for Science, Head of 101 Department)
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference / 21-th Crimean Conference "High-frequency equipment and telecommunication technologies" 2011
EXCHANGE OF EXPERIENCES IN THE FIELD OF CREATING ULTRA BROADBAND RADIO ELECTRON SYSTEMS
Proceedings of the VI All-Russian Scientific and Technical Conference (Omsk, 19 – 20 April 2016)
Information